document number: 93170 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 1 fast recovery diodes (stud version), 200 a sd203n/r series vishay high power products features ? high power fast recovery diode series ? 1.0 to 2.0 s recovery time ? high voltage ratings up to 2500 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? compression bonded encapsulation ? stud version jedec do-205ab (do-9) ? maximum junction temperature 125 c ? rohs compliant ? lead (pb)-free ? designed and qualified for industrial level typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications product summary i f(av) 200 a do-205ab (do-9) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 200 a t c 85 c i f(rms) 314 a i fsm 50 hz 4990 60 hz 5230 i 2 t 50 hz 125 ka 2 s 60 hz 114 v rrm range 400 to 2500 v t rr range 1.0 to 2.0 s t j 25 c t j - 40 to 125
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93170 2 revision: 08-apr-08 sd203n/r series vishay high power products fast recovery diodes (stud version), 200 a electrical specifications voltage ratings type number voltage code v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i rrm maximum t j = 125 c ma sd203n/r..s10 04 400 500 35 08 800 900 10 1000 1100 sd203n/r..s15 12 1200 1300 14 1400 1500 16 1600 1700 sd203n/r..s20 20 2000 2100 25 2500 2600 forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 200 a 85 c maximum rms current i f(rms) dc at 76 c case temperature 314 a maximum peak, one-cycle non-repetitive forward current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 4990 t = 8.3 ms 5230 t = 10 ms 100 % v rrm reapplied 4200 t = 8.3 ms 4400 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 125 ka 2 s t = 8.3 ms 114 t = 10 ms 100 % v rrm reapplied 88 t = 8.3 ms 81 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1250 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.00 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.47 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.10 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.46 maximum forward voltage drop v fm i pk = 628 a, t j = 25 c, t p = 400 s square pulse 1.65 v
document number: 93170 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 3 sd203n/r series fast recovery diodes (stud version), 200 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 125 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s10 1.0 750 25 - 30 2.4 52 33 s15 1.5 2.9 90 44 s20 2.0 3.2 107 46 thermal and mechanical specifications parameter symbol test conditions values units maximum operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.115 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.08 mounting torque 10 % not-lubricated threads 31 nm lubricated threads 24.5 approximate weight 250 g case style see dimensions (link at the end of datasheet) do-205ab (do-9) r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.010 0.008 t j = t j maximum k/w 120 0.013 0.014 90 0.017 0.019 60 0.025 0.027 30 0.044 0.044 i fm t rr dir dt i rm(rec) q rr t
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93170 4 revision: 08-apr-08 sd203n/r series vishay high power products fast recovery diodes (stud version), 200 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 70 80 90 100 110 120 130 0 40 80 120 160 200 240 30 60 90 120 180 avera g e forwa rd current (a) conduction angle maximum allowable case temperature (c) sd203n/ r series r (dc) = 0.115 k/ w thjc 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 30 60 90 180 dc 120 averag e forwa rd current (a) conduction period maximum allowable case temperature (c) sd 2 0 3 n / r se r i e s r (dc) = 0.115 k/ w thjc 0 50 100 150 200 250 300 350 0 50 100 150 200 180 120 90 60 30 average forward current (a) maximum average forward power loss (w) rm s li m i t conduction angle sd203n/ r series t = 125c j 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 dc 180 120 90 60 30 average forward current (a) rm s li m i t maximum average forward power loss (w) conduction period sd 2 0 3 n / r se r i e s t = 125c j 1000 1500 2000 2500 3000 3500 4000 4500 5000 110100 numb e r of eq ua l amp litud e ha lf cyc le curre nt pulses (n) pe a k ha lf s ine wa ve fo rw a rd curren t (a) sd 2 0 3 n / r se r i e s init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with ra ted v ap plied following surge. rrm 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 0.01 0.1 1 pulse train duration (s) peak half sine wave forward current (a) initia l t = 125 c no volta g e rea pplied ra t e d v re a p p l i e d rrm j sd203n/ r series versus pulse train duration. maximum non repetitive surge current
document number: 93170 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 5 sd203n/r series fast recovery diodes (stud version), 200 a vishay high power products fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 9 - typical forward recovery characteristics fig. 10 - recovery time characteristics f ig. 11 - recovery charge characteristics 100 1000 10000 .5 2.5 4.5 6.5 instantaneous forward current (a) instantaneous forward voltage (v) sd203n/ r serie s t = 2 5 c t = 1 2 5 c j j 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq uare wa ve pulse duration (s) thjc transient thermal impedance z (k/w) sd 2 0 3 n / r se r i e s steady state value: r = 0.115 k/ w (dc operation) thjc 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 1400 1600 1800 2000 forwa rd recovery (v) rate off fall of forward current di/dt (a/usec) t = 1 2 5 c t = 2 5 c j j sd 2 0 3 n / r. . s2 0 se r i e s i v fp 1.6 1.8 2 2.2 2.4 2.6 2.8 0 0 1 0 1 rate of fall of forward current - di/dt (a/s) ma ximum re verse rec overy time - trr ( s) 400 a 200 a i = 750 a sq u a r e p u l se fm sd 2 0 3 n / r. . s1 0 se r i e s t = 125 c, v = 30v j r 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0 20406080100 maximum reverse recovery charge - qrr (c) ra t e o f fa l l o f fo rw a rd c u r re n t - d i / d t ( a / s) 400 a 200 a i = 750 a sq u a r e p u l se fm sd 2 0 3 n / r. . s1 0 se r i e s t = 1 2 5 c , v = 3 0 v j r
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93170 6 revision: 08-apr-08 sd203n/r series vishay high power products fast recovery diodes (stud version), 200 a fig. 12 - recovery current characteristics fig. 13 - recovery time characteristics fig. 14 - recovery c harge characteristics fig. 15 - recovery current characteristics fig. 16 - recovery time characteristics fig. 17 - recovery charge characteristics 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) 400 a 200 a i = 750 a sq u a r e p u l se fm sd 2 0 3 n / r. . s1 0 se r i e s t = 125 c, v = 30v j r 1.6 2 2.4 2.8 3.2 3.6 0 0 1 0 1 ra te of fa ll of forwa rd current - d i/ d t (a/ s) ma xim um re verse rec o ve ry time - trr ( s) 400 a 200 a i = 750 a sq u a r e pu l s e fm sd 2 0 3 n / r. . s1 5 se r i e s t = 125 c, v = 30v r j 50 60 70 80 90 100 110 120 130 140 150 160 170 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery charge - qrr (c) ra te of fa ll of forwa rd current - d i/ d t (a/s) 400 a 200 a i = 750 a sq u a r e pu l se fm sd 2 0 3 n / r. . s1 5 se r i e s t = 125 c, v = 30v j r 10 20 30 40 50 60 70 80 90 100 110 120 130 10 20 30 40 50 60 70 80 90 100 maximum reverse rec overy current - irr (a) rate of fall of forward current - di/dt (a/s) 400 a 200 a i = 750 a sq u a r e pu l se fm sd 2 0 3 n / r. . s1 5 s eries t = 125 c, v = 30v j r 2.4 2.6 2.8 3 3.2 3.4 3.6 0 0 1 0 1 rate of fall of forward current - di/dt (a/s) m a x i m u m re v e r se re c o v e r y ti m e - tr r ( s) 400 a 200 a i = 750 a sq u a r e pu l se fm sd 2 0 3 n / r. . s2 0 se r i e s t = 125 c, v = 30v j r 50 100 150 200 250 300 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery charge - qrr (c) ra t e of fa ll of forwa rd current - di/ d t (a/ s) 400 a 200 a i = 750 a sq u a r e pu l se fm sd203n/ r..s20 s eries t = 125 c, v = 30v j r
document number: 93170 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 7 sd203n/r series fast recovery diodes (stud version), 200 a vishay high power products fig. 18 - recovery current characteristics fig. 19 - maximum total energy loss per pulse characteristics fig. 20 - maximum total energy loss per pulse characteristics 20 30 40 50 60 70 80 90 100 110 120 130 10 20 30 40 50 60 70 80 90 100 ma xim um reve rse re c o very c urrent - irr (a) rate of fall of forward current - di/dt (a/s) 400 a 200 a i = 750 a sq u a r e pu l se fm sd 2 0 3 n / r. . s2 0 se r i e s t = 125 c, v = 30v j r 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 4 2 0.1 0.2 0.4 0.02 0.04 pulse ba se w id t h (s) 20 jo ules p er p ulse 0.01 peak forward current (a) sinusoid al pulse 10 d v/ d t = 1000v/ s s d203n/ r..s10 series t = 125c , v = 1120v rrm j 1e1 1e2 1e3 1e4 1 2 0.2 0.4 pulse basewidth (s) 10 20 joules per pulse 4 0.1 0.06 sd203n/ r..s 10 series tr a p e zo i d a l pu l se t = 125c, v = 1120v rrm d v/ d t =1000v/ s, d i/ dt =50a/ s j tp 1e1 1e2 1e3 1e4 1e11e21e31e4 1 4 2 0.1 0.2 0.4 0.02 0.04 pu lse ba se w id t h ( s) 20 jo ules p er p ulse 0.01 peak forward current (a) si n u so i d a l pu l se 10 dv/dt = 1000v/s sd 2 0 3 n / r. . s1 5 se r i e s t = 125c, v = 1120v j rrm tp 1e1 1e2 1e3 1e4 1 2 0.2 0.4 pu l se ba se w i d t h ( s) 10 20 jo ules p er p ulse 4 0.1 sd 2 0 3 n / r. . s1 5 se r i e s trapezoidal pulse t = 125c, v = 1120v d v/ dt=1000v/ s, di/ dt=50a/ s j rrm tp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93170 8 revision: 08-apr-08 sd203n/r series vishay high power products fast recovery diodes (stud version), 200 a fig. 21 - maximum total energy loss per pulse characteristics ordering information table 1e1 1e2 1e3 1e4 1e11e21e31e4 1 4 2 0.1 0.2 0.4 0.02 0.04 pulse ba se w id t h ( s) 20 jo ule s p er p ulse 0.01 peak forward current (a) si n u s o i d a l p u l s e 10 dv/ dt = 1000v/ s sd 2 0 3 n / r. . s2 0 se r i e s t = 1 2 5 c , v = 1 7 6 0 v rrm j tp 1e1 1e2 1e3 1e4 1 2 0.2 0.4 pu l se ba se w i d t h ( s) 10 20 jo ule s p er p ulse 4 sd 2 0 3 n / r. . s 20 series trapezoidal pulse t = 125c, v = 1760v j rrm d v/ d t =1000v/ s, d i/ d t=50a/ s tp device code 5 13 24 6789 sd 20 3 r 25 s20 p b c 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code (see recovery characteristics table) 7 - p = stud base do-205ab (do-9) 3/4" 16unf-2a m = stud base do-205ab (do-9) m16 x 1.5 8 - 7 b = flag top terminals (for cathode/ anode leads) s = isolated lead with silicon sleeve (red = reverse polarity; blue = normal polarity) none = not isolated lead 9 - v = glass-metal seal (only up to 1600 v) c = ceramic housing (over 1600 v) links to related documents dimensions http://www.vishay.com/doc?95301
document number: 95301 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 09-apr-08 1 do-205ab (do-9) outline dimensions vishay semiconductors dimensions in millimeters (inches) ceramic housing 19 (0.75) max. 4 (0.16) max. dia. 8.5 (0.33) nom. dia. 27.5 (1.08) max. 16 (0.63) max. sw 32 *for metric device: m16 x 1.5 contact factory c.s. 35 mm 2 (0.054 s.i.) 210 (8.27) 10 (0.39) 82 (3.23) min. 21 (0.82) max. 3/4"-16unf-2a* 9.5 (0.37) min. 39 (1.53) max.
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